光触媒材料

Photocatalytic material

Abstract

PROBLEM TO BE SOLVED: To provide a high-activity photocatalytic material which contains such a p-type optical semiconductor that many carriers become positive holes by restraining the generation of an oxygen defect causing a deterioration in photocatalytic activity by solving the problem that when p-type ZnO is used as a photocatalyst, the p-type ZnO has high carrier density of ≥10 14 (cm -3 ) and the electron pair of positive holes excited by light is used in photocatalytic reaction but when the density of the positive holes being the p-type carriers is increased too much and becomes ≥10 14 (cm -3 ), the dispersion among the carriers becomes remarkable and the photocatalytic activity is suppressed. SOLUTION: This photocatalytic material contains the p-type optical semiconductor having ≥2.8 eV band gap and ≤10 13 (cm -3 ) carrier density. ZnO is preferably used as the p-type optical semiconductor. COPYRIGHT: (C)2005,JPO&NCIPI
【課題】従来報告されたp型ZnOでは、キャリア密度はいずれも10 14 (cm −3 )以上と高い。光触媒として使用する場合、光励起した電子正孔対が光触媒反応に利用されるが、p型キャリアである正孔が10 14 (cm −3 )以上と多くなりすぎると、キャリア同士の散乱が顕著になり、光触媒活性を抑制してしまう。 【解決手段】バンドギャップが2.8eV以上で、キャリア密度が10 13 (cm −3 )以下のp型光半導体を含むことを特徴とする光触媒材料を提供する。前記p型光半導体がZnOが好ましい。 【選択図】なし。

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