化合物半導体発光素子

Compound semiconductor light emitting element

Abstract

【課題】 本発明は、1回のワイヤボンディングで済み、位置合わせの容易な実装が可能で、工数の低減につながるチップを提供することを課題とする。 【解決手段】 サファイア基板11と、基板11の一面上に形成される第1の伝導型の半導体薄膜層13と、第1の伝導型の半導体薄膜層13上に形成される活性層14,15,16と、この活性層14,15,16上に形成される第2の伝導型の半導体薄膜層17と、第2の伝導型の半導体薄膜層17上に設けられる一方の電極17と、基板11の他面に設けられる他方の電極33aと、基板11を貫通し他方の電極33aが接続される第1の伝導型の半導体薄膜層13に達する深さのレーザ加工により形成された縦穴20aと、第1の半導体薄膜層13と他方の電極33aとを電気的に接続する縦穴20aに形成される導電性材料31aからなる電気的パスと、を備え、縦穴20aは、その深さ方向に向かって先細りの断面形状に形成されている。 【選択図】 図20
<P>PROBLEM TO BE SOLVED: To manufacture a chip in which wire bonding is required only once and labor can be reduced by facilitating alignment in packaging, and to obtain the elements with a high yield by decreasing the number of steps and reducing cracking of a substrate. <P>SOLUTION: The compound semiconductor light emitting element comprises a sapphire substrate 11, an first conductivity type semiconductor thin film layer 13 formed on one surface of the substrate 11, active layers 14, 15 and 16 formed on the first conductivity type semiconductor thin film layer 13, a second conductivity type semiconductor thin film layer 17 formed on the active layers 14, 15 and 16, one electrode 17 provided on the second conductivity type semiconductor thin film layer 17, the other electrode 33a provided on the other surface of the substrate 11, a vertical hole 20a formed by laser machining to penetrate the substrate 11 and to reach the first conductivity type semiconductor thin film layer 13 being connected with the other electrode 33a, an electric path of a conductive material 31a formed in the vertical hole 20a to connect the first conductivity type semiconductor thin film layer 13 and the other electrode 33a electrically, wherein the vertical hole 20a has a cross-section tapered toward the depth direction. <P>COPYRIGHT: (C)2005,JPO&NCIPI

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Cited By (10)

    Publication numberPublication dateAssigneeTitle
    JP-2008198998-AAugust 28, 2008Samsung Electro-Mechanics Co Ltd, サムソン エレクトロ−メカニックス カンパニーリミテッド.Semiconductor light-emitting element
    JP-2010118698-AMay 27, 2010Samsung Electro-Mechanics Co Ltd, サムソン エレクトロ−メカニックス カンパニーリミテッド.半導体発光素子
    JP-2012134346-AJuly 12, 2012Opnext Japan Inc, 日本オプネクスト株式会社Semiconductor laser device
    KR-100663321-B1January 02, 2007주식회사 이츠웰수직전극형 발광 다이오드 및 그 제조 방법
    US-8847266-B2September 30, 2014Samsung Electronics Co., Ltd.Semiconductor light emitting device
    US-8872205-B2October 28, 2014Samsung Electronics Co., Ltd.Semiconductor light-emitting device and method of manufacturing the same
    US-9099631-B2August 04, 2015Samsung Electronics Co., Ltd.Semiconductor light-emitting device and method of manufacturing the same
    US-9293675-B2March 22, 2016Samsung Electronics Co., Ltd.Semiconductor light-emitting device and method of manufacturing the same
    US-9660163-B2May 23, 2017Samsung Electronics Co., Ltd.Semiconductor light-emitting device and method of manufacturing the same